Contactor having LSI-circuit-side contact piece and test-board-side contact piece for testing semiconductor device and manufacturing method thereof

ABSTRACT

A contactor is placed between a semiconductor device and a test board. A contact electrode of the contactor electrically connects the semiconductor device to the test board. The contact electrode is formed of a conductive layer provided on an insulating substrate. The contact electrode comprises a first contact piece which contacts a terminal of the semiconductor device, a second contact piece which contacts an electrode of the test board, and a connecting portion which electrically connects the first contact piece and the second contact piece.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention generally relates to a contactor fortesting a semiconductor device and, more particularly, to a contactorfor testing an LSI circuit having fine terminals or terminals arrangedwith a fine pitch and a manufacturing method of the contactor.

[0003] In testing a semiconductor device such as an LSI circuit during amanufacturing process thereof, a contactor is used for making electricalcontact with a terminal of the LSI circuit. In testing a conventionalsemiconductor device having a socket for connection, the socket can beused as a contactor. However, an LSI circuit, such as a so-called KGD(Known Good Die), which is to be tested as a bare chip not yet packaged,or a CSP (Chip Size Package), does not have a socket. Therefore, acontactor for test use needs to be prepared for such an LSI circuit.

[0004] Recently, a wafer-level packaging technology has been developed,which technology allows for packaging a semiconductor chip in the formof a wafer. This calls for testing of a plurality of semiconductordevices in the form of a wafer. Therefore, it is desired that a low-costtesting contactor be developed, which contactor can be easilymanufactured and is usable for such testing.

[0005] 2. Description of the Related Art

[0006] Tests using contactors include a burn-in test and such a finaltest as a high-speed test.

[0007] Since a burn-in test requires a long period of time for itsprocess, in a wafer-level testing, all of LSI circuits on a wafer needto be tested at one time. To realize this, terminals of all of the LSIcircuits on the wafer need to be put into contact with probes, and wiresconnected to the probes need to be drawn out to the exterior by a testboard (burn-in board). Such a burn-in board has to have tens ofthousands of terminals.

[0008] Since the burn-in test puts an LSI circuit under ahigh-temperature condition (ranging from 125° C. to 150° C.), a testingcontactor has to have high heat resistivity. It has conventionally beenvery difficult to realize a contactor which fulfills these requirements,and if the contactor could be realized, the contactor would beextraordinarily costly and have a short life duration.

[0009] To conduct a high-speed test in the form of a wafer as a finaltest, a length of a probe of a contactor has to be smaller. That is,since the length of the probe is substantially proportional to theimpedance of the contactor, the high-speed test cannot be performed withthe increased impedance of a contactor having a long probe. Therefore,the probe of a contactor used in the high-speed test has to be as shortas possible.

[0010] As in the burn-in test, in order to test a plurality ofsemiconductor devices at one time, a multitude of probes have to bearranged close to one another. It has conventionally been very difficultto realize a contactor which fulfills these requirements, and if itcould be realized, the contactor would be extraordinarily costly.

[0011]FIG. 1 is a cross-sectional view of a part of a conventionalcontactor using an anisotropic conductive elastomer. The contactor shownin FIG. 1 uses an anisotropic conductive rubber 2 as an anisotropicconductive elastomer. The anisotropic conductive rubber 2 is disposedbetween an LSI circuit 6, a testee, and a test board 8. The test board 8has electrodes 8 a to be electrically connected to terminals 6 a of theLSI circuit 6.

[0012] A membrane 4 is disposed between the anisotropic conductiverubber 2 and the LSI circuit 6 in order to ensure contacts between theanisotropic conductive rubber 2 and the terminals 6 a of the LSI circuit6. Therefore, the membrane 4 is unnecessary if the contacts can beensured without it. In addition, although FIG. 1 shows the terminals 6 aof the LSI circuit 6 formed on concave portions, the terminals 6 a donot necessarily have to be formed on the concave portions, but may beformed on a flat surface.

[0013] The anisotropic conductive rubber 2 is arranged to haveconductive portions 2 b and other insulating portions. Accordingly, eachof the terminals 6 a of the LSI circuit 6 is electrically connected tothe corresponding electrode 8 a. In this structure, an elasticity of theanisotropic conductive rubber 2 ensures a contact pressure between eachof the terminals 6 a of the LSI circuit 6 and the correspondingelectrode 8 a of the test board 8.

[0014] The above-mentioned contactor using an anisotropic conductiverubber has a simple structure and is often used in conventionalwafer-level testing. The anisotropic conductive rubber has an advantageof having a small inductance. Also, the anisotropic conductive rubber,when deteriorated or damaged, can be replaced, independent of a testboard.

[0015] Aside from the above-mentioned contactor using an anisotropicconductive material, there is a contactor using a spring-type contactpin. FIG. 2 is a side view of a part of a conventional contactor using aspring pin.

[0016] The contactor shown in FIG. 2 has bent wires 10 as probes(contact pins) on a test board 12. Such a bonding wire as a gold wire isused as the wire 10. The wire 10 is formed by a wire bonder.Specifically, the wire 10 is severed after one end of the wire 10 isbonded to an electrode 12 a of the test board 12 and is bent as shown inFIG. 2. The bent parts enable the wire 10 to deform elastically in adirection perpendicular to a plane of the test board 12. Pressing theother end of the wire 10 against the terminal 6 a of the LSI circuit 6and utilizing the elastic deformation of the wire 10 secures a surecontact of the wire 10 to the terminal 6 a.

[0017] In the above-mentioned contactor using a spring pin, the widerange of the elastic deformation, from 100 μm to 300 μm, of the wire 10(probe) secures a sufficient contact pressure. Additionally, in caseheights of a multitude of the wires 10 vary to some degree, a surecontact is secured between each of the wires 10 and the correspondingterminal 6 a. Also, a durability of the wire 10 is so superior to thatof the anisotropic conductive rubber that the wire 10 can be usedrepeatedly one hundred thousand times approximately. Further, the wire10 will not be deteriorated if put under a high-temperature condition asin a burn-in test.

[0018] As another example of a conventional contactor, there is acantilever probing card. The cantilever probing card has a probecomposed of such substances as tungsten. The probe is set oblique on asurface of a test board. The probe is of the size quite longer than theabove-mentioned bent wire probe, providing flexibility to the probeunder consideration. That is, the oblique arrangement and theflexibility of this probe give a sufficient elasticity so as to ensure acontact pressure.

[0019] The above-mentioned contactor using an anisotropic conductivematerial has the following problems to be solved: (1) a narrow range ofan elastic deformation; and (2) a short durability.

[0020] (1) The Problem of a Narrow Range of an Elastic Deformation

[0021] A 200-μm-thick anisotropic conductive rubber has a narrow rangeof elastic deformation from approximately 25 μm to 100 μm. Therefore, ifa terminal-containing surface of an LSI circuit is not flat enough, thenarrow range of the elastic deformation cannot provide a sure contact.Thus, the LSI circuit has to have such a costly substrate as a ceramicsubstrate and a glass substrate having a flat enough surface.Additionally, with respect to such an LSI circuit as a wafer-level CSPusing large solder balls, heights of the solder balls on a wafer vary byapproximately 100 μm, with which variation the anisotropic conductiverubber cannot provide a sure contact.

[0022] (2) The Problem of a Short Durability

[0023] The anisotropic conductive rubber is extremely prone todeterioration in a hightemperature condition and, thus, cannot endure arepeated contact. Especially in a high-temperature condition (rangingfrom 125° C. to 150° C.) as in a burn-in test, a base rubber undergoes aplastic deformation and, thus, cannot endure repeated use. In responseto this, the deteriorated anisotropic conductive rubber may be replaced,independent of a test board. However, an anisotropic conductive rubberusable for the size of wafer costs tens of thousands of yen per piece,raising a test cost for a wafer to be tested.

[0024] The above-mentioned contactor using a spring pin has thefollowing problems to be solved: (1) an extremely high manufacturingcost; and (2) an irreplaceable contact pin.

[0025] (1) The Problem of an Extremely High Manufacturing Cost

[0026] A bent contact pin (probe) as shown in FIG. 2 is formed one byone by a wiring bonder. Therefore, in accordance with the number ofprobes to be formed, a manufacturing cost of a contactor increases. Awafer-level LSI circuit sometimes has as many as 50,000 terminals. Inthis case, a contactor has to have 50,000 probes correspondingly,extremely raising a manufacturing cost of the contactor. Additionally, alife cycle of a contactor is currently shortened to approximately 180days, inevitably putting limits to repeated use of a contactor used in alengthy burn-in test. For example, when a burn-in test requires 24 hours(a day) per wafer, a contactor can be used only 180 times approximately.Therefore, a depreciation expense of a contactor for a wafer becomesenormously high. Hence, such a contactor cannot practically be employed.(2) The Problem of an Irreplaceable Contact Pin

[0027] When even only one of contact pins (probes) becomes damaged andunusable, the entire contactor also becomes unusable. As a matter offact, in an LSI circuit test, it is difficult to completely keep acontact pin from being burned by a latch-up (overcurrent) in a burn-intest or from being damaged by a mechanical shock. However, since acontact pin is directly bonded to an electrode of a test board, it isdifficult to remove a damaged pin from among other pins and re-form anew pin among the other pins. Therefore, a loss of only one pin may leadto spoiling an entire contactor and losing a huge sum financially.

[0028] Also, the cantilever probing card has a problem to be solved: ahigh impedance.

[0029] A contact pin of the cantilever probing card is ordinarily formed20 mm to 30 mm in length in order to acquire a certain amount of elasticdeformation. Generally, a pin of 20 to 30 mm in length has an impedanceof 20 to 30 nH (nanohenries) and, thus, the entire probing card haslarge impedance. With the probe card having the large impedance, ahigh-speed test cannot be performed. For example, a device designed foran approximately 20 to 30 MHz operation can be tested with pins of 20 to30 mm in length without a problem. However, a high-speed device designedto operate at more than 200 MHz cannot be tested at high speed becauseof the large impedance of the cantilever probing card.

SUMMARY OF THE INVENTION

[0030] It is a general object of the present invention to provide animproved and useful contactor for testing a semiconductor device inwhich contactor the above-mentioned problems are eliminated.

[0031] A more specific object of the present invention is to provide acontactor for testing a semiconductor device which contactor, for awaferlevel burn-in test: (1) is low-cost and can have a multitude ofprobes; (2) can be replaced independently of other contactors when aprobe thereof is damaged; and (3) has high heat resistivity and amechanical life duration of several hundreds of times, and whichcontactor, for a final test: (1) can undergo a high-speed test due toits short probe; and (2) can be replaced independently of othercontactors when a probe thereof is damaged, and a manufacturing methodof the contactor.

[0032] In order to achieve the above-mentioned objects, there isprovided according to one aspect of the present invention a contactorwhich is placed between a semiconductor device and a test board so as toelectrically connect the semiconductor device to the test board, thecontactor comprising:

[0033] an insulating substrate; and

[0034] a contact electrode formed of a conductive layer provided on theinsulating layer, the contact electrode comprising a first contact piecewhich contacts a terminal of the semiconductor device, a second contactpiece which contacts an electrode of the test board, and a connectingportion which electrically connects the first contact piece and thesecond contact piece.

[0035] According to the present invention, the contact electrode isformed of the conductive layer provided beforehand on the insulatinglayer, and contacts both the semiconductor device and the test board.Therefore, by using a conventional technology for manufacturing asemiconductor device, a multitude of the contact electrodes can beformed on the insulating substrate at one time. Additionally, sinceelasticity of the conductive layer provides a contact pressure for eachof the contact pieces, a low-cost contact electrode having a simplestructure can be formed. Further, the contact piece is not bonded to thetest board but only contacts the electrode of the test board in testing.Therefore, when the contact electrode is damaged, only the contactorneeds to be replaced. Further still, the contact piece, formed of theconductive layer, can provide a wide range of elastic deformation, andthus the length of the contact electrode can be smaller. This allows, intesting, the semiconductor device to perform at a high speed.

[0036] Additionally, in the present invention, the contactor may furthercomprise an opening in the insulating substrate at a position where thecontact electrode is formed, one of the first contact piece and thesecond contact piece extending from one surface of the insulatingsubstrate to the other surface thereof through the opening.

[0037] According to the present invention, since one of the firstcontact piece and the second contact piece extends through the openingfrom one surface of the insulating substrate to the other surfacethereof, the contact electrode can have a simple structure but stillallows the contact pieces to extend on both surfaces of the insulatinglayer.

[0038] Additionally, with the contactor according to the presentinvention, the first contact piece and the second contact piece may beplaced away from each other, and the connecting portion electrically mayconnect the first contact piece and the second contact piece as aninterconnection pattern having a predetermined shape.

[0039] According to the present invention, since the first contact pieceand the second contact piece are formed as an interconnection pattern,the second contact piece can be formed at any position. This provides alarge degree of freedom in arranging the second contact piece, and thusprovides a large degree of freedom in arranging the electrode of thetest board which the second contact piece contacts.

[0040] Additionally, with the contactor according to the presentinvention, each of the first contact piece and the second contact piecemay be placed so that a longitudinal direction thereof is aligned with aradial direction from a center of the insulating substrate.

[0041] According to the present invention, the first contact piece andthe second contact piece are placed so that the longitudinal directionsthereof are aligned with a radial direction from the center of theinsulating substrate. This prevents the tip of each of the contactpieces from being detached from the terminal of the semiconductor deviceor the electrode of the test board when the contactor, the semiconductordevice and the test board undergo thermal expansion.

[0042] In order to achieve the above-mentioned objects, there is alsoprovided according to another aspect of the present invention a methodof manufacturing a contactor which contactor is placed between asemiconductor device and a test board so as to electrically connect thesemiconductor device to the test board, the method comprising the stepsof:

[0043] forming a conductive layer on an insulating substrate;

[0044] processing the conductive layer into a contact electrodecomprising a first contact piece which contacts a terminal of thesemiconductor device, a second contact piece which contacts an electrodeof the test board, and a connecting portion which electrically connectsthe first contact piece and the second contact piece; and

[0045] bending the first contact piece toward a first surface of theinsulating substrate at a predetermined angle and bending the secondcontact piece toward a second surface opposite to the first surface ofthe insulating substrate at a predetermined angle.

[0046] According to the present invention, the contact electrode isformed of the conductive layer provided beforehand on the insulatinglayer, and contacts both the semiconductor device and the test board.Therefore, by using a conventional technology for manufacturing asemiconductor device, a multitude of the contact electrodes can beformed on the insulating substrate at one time. Additionally, thecontact pieces bent toward opposing sides and elasticity of theconductive layer provide a contact pressure for each of the contactpieces. Therefore a low-cost contact electrode having a simple structurecan be formed. Further, the contact piece is not bonded to the testboard but only contacts the electrode of the test board in testing.Therefore, when the contact electrode is damaged, only the contactorneeds to be replaced. Further still, the contact piece, formed of theconductive layer, can provide a wide range of elastic deformation, andthus the length of the contact electrode can be smaller. This allows, intesting, the semiconductor device to perform at a high speed.

[0047] Additionally, in the method according to the present invention,the step of forming a conductive layer may include the step of applyinga film material composed of a conductive material on a surface of theinsulating substrate; and

[0048] the step of processing may include the step of removing parts ofthe conductive layer applied on the insulating substrate so as to formthe first contact piece, the second contact piece and the connectingportion.

[0049] According to the present invention, the conductive layer isformed on the insulating substrate by applying a film material such as acopper plate or a copper foil. The conductive layer can be easilyprocessed and formed into the contact electrode by such a method asetching.

[0050] Additionally, in the method according to the present invention,the step of forming a conductive layer may include the step ofdepositing a conductive material on a surface of the insulatingsubstrate so as to form the conductive layer; and

[0051] the step of processing may include the step of removing parts ofthe conductive layer deposited on the insulating substrate so as to formthe first contact piece, the second contact piece and the connectingportion.

[0052] According to the present invention, the conductive layer isformed on the insulating substrate by depositing a conductive materialby such a method as sputtering or deposition. The conductive layer canbe easily processed and formed into the contact electrode by such amethod as etching.

[0053] Additionally, the method according to the present invention mayfurther comprise the step of forming an opening in the insulatingsubstrate at a position where each of the first contact piece and thesecond contact piece is formed.

[0054] According to the present invention, since the opening is formedin the insulating substrate at a position where the first contact pieceand the second contact piece are formed, one of the first contact pieceand the second contact piece can be bent thorough the opening to theopposite side. Additionally, a bending template can be used through theopening to bend each of the contact pieces. Therefore, a contactelectrode can be easily formed.

[0055] In order to achieve the above-mentioned objects, there is alsoprovided according to still another aspect of the present invention amethod of manufacturing a contactor which contactor is placed between asemiconductor device and a test board so as to electrically connect thesemiconductor device to the test board, the method comprising the stepsof:

[0056] processing parts of an insulating substrate into a first contactpiece which contacts a terminal of the semiconductor device and a secondcontact piece which contacts an electrode of the test board;

[0057] forming a conductive layer on the first contact piece and thesecond contact piece and forming a part of the conductive layer into aconnecting portion which electrically connects the first contact pieceand the second contact piece; and

[0058] bending the first contact piece toward a first surface of theinsulating substrate at a predetermined angle and bending the secondcontact piece toward a second surface opposite to the first surface ofthe insulating substrate at a predetermined angle.

[0059] According to the present invention, after forming the contactpieces on the insulating substrate, the conductive layer is formed onthe contact pieces to form the contact electrode. Therefore, by using aconventional technology for manufacturing a semiconductor device, amultitude of the contact electrodes can be formed on the insulatingsubstrate at one time. Additionally, the contact pieces bent towardopposing sides and elasticity of the conductive layer provide a contactpressure for each of the contact pieces. Therefore a low-cost contactelectrode having a simple structure can be formed. Further, the contactpiece is not bonded to the test board but only contacts the electrode ofthe test board in testing. Therefore, when the contact electrode isdamaged, only the contactor needs to be replaced. Further still, thecontact piece, formed of the conductive layer, can provide a wide rangeof elastic deformation, and thus the length of the contact electrode canbe smaller. This allows, in testing, the semiconductor device to act ata high speed.

[0060] Additionally, in the method according to the present invention,the step of processing may include the step of forming an opening in theinsulating substrate so as to form the-first contact piece and thesecond contact piece.

[0061] According to the present invention, since a shape of each of thefirst contact piece and the second contact piece is formed by formingthe opening in the insulating substrate, the contact piece can be easilyformed.

[0062] Additionally, in the method according to the present invention,at least one of the first contact piece and the second contact piece maybe one of a curved plane and a bent plane, and the method may furthercomprise the step of bending the at least one of the first contact pieceand the second contact piece, at a position where the connecting portionand the at least one of the first contact piece and the second contactpiece meet, at a predetermined angle from the insulating substrate.

[0063] According to the present invention, since the contact piece has acurved or bent plane, the curved or bent shape achieves a wide range ofelastic deformation.

[0064] Additionally, the method according to the present invention mayfurther comprise the step of forming at least one surface layer on asurface of the conductive layer so as to change properties of thecontact electrode.

[0065] According to the present invention, forming the surface layer onthe surface of the conductive layer can change properties, such aselasticity and electric properties, of the contact electrode.

[0066] Additionally, the method according to the present invention mayfurther comprising the step of forming a reinforcing material at aposition where the connecting portion and each of the first contactpiece and the second contact piece meet.

[0067] According to the present invention, the reinforcing material canbe formed at a position where the connecting portion and each of thefirst contact piece and the second contact piece connect. That is, onlythe part which suffers the largest stress in each of the contact piecesis reinforced. This prevents the contact piece from undergoing permanentdeformation or being damaged.

[0068] Other objects, features and advantages of the present inventionwill become more apparent from the following detailed description whenread in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0069]FIG. 1 is a cross-sectional view of a part of a conventionalcontactor using an anisotropic conductive elastomer;

[0070]FIG. 2 is a side view of a part of a conventional contactor usinga spring pin;

[0071]FIG. 3 is a cross-sectional view of a part of a contactoraccording to a first embodiment of the present invention;

[0072]FIG. 4 is a plan view of a contact electrode shown in FIG. 3;

[0073]FIG. 5 is a cross-sectional view of the contact electrode shown inFIG. 3;

[0074]FIG. 6 is an illustration for explaining steps of forming thecontact electrode shown in FIG. 5;

[0075]FIG. 7 is a cross-sectional view of a bending template used in abending process of the contact electrode;

[0076]FIG. 8 is a cross-sectional view of a contact electrode providedwith an uppermost layer;

[0077]FIG. 9A is a plan view of a contact electrode provided with areinforcing material;

[0078]FIG. 9B is a cross-sectional view of the contact electrodeprovided with the reinforcing material;

[0079]FIG. 10 is a plan view of a variation of the contact electrodeshown in FIG. 3;

[0080]FIG. 11 is a plan view of another variation of the contactelectrode shown in FIG. 3;

[0081]FIG. 12 is a cross-sectional view of a structure comprising acontact electrode formed on the side of a test board;

[0082]FIG. 13 is a cross-sectional view of a contact electrode formed ona contactor according to a second embodiment of the present invention;

[0083]FIG. 14 is a plan view of a contact electrode formed on acontactor according to a third embodiment of the present invention;

[0084]FIG. 15 is a cross-sectional view of the contact electrode shownin FIG. 14;

[0085]FIG. 16 is a cross-sectional view of the contact electrode shownin FIG. 14 being placed between an LSI circuit and a test board;

[0086]FIG. 17 is a cross-sectional view of a variation of the contactelectrode shown in FIG. 14;

[0087]FIG. 18 is a plan view of a contact electrode formed on acontactor according to a fourth embodiment of the present invention;

[0088]FIG. 19 is an illustration for explaining steps of forming thecontact electrode shown in FIG. 18;

[0089]FIG. 20 is a plan view of an opening formed in an insulatingsubstrate;

[0090]FIG. 21 is an illustration for explaining steps of forming thecontact electrode shown in FIG. 18;

[0091]FIG. 22 is an illustration for explaining a contactor according toa fifth embodiment of the present invention;

[0092]FIG. 23 is an illustration of a variation of the contactor shownin FIG. 22;

[0093]FIG. 24 is an illustration of another variation of the contactorshown in FIG. 22;

[0094]FIG. 25 is a cross-sectional view of a part of a contactoraccording to a sixth embodiment of the present invention;

[0095]FIG. 26 is a plan view of the contact electrode shown in FIG. 25;

[0096]FIG. 27 is a cross-sectional view of the contact electrode shownin FIG. 25;

[0097]FIG. 28 is a plan view of a contact electrode formed on acontactor according to a seventh embodiment of the present invention;

[0098]FIG. 29 is a side view of the contact electrode shown in FIG. 28;

[0099]FIG. 30 is a plan view of an example of a shape of an extendingportion of the contact electrode shown in FIG. 28;

[0100]FIG. 31 is a plan view of a contact electrode before being bent,the contact electrode being formed on a contactor according to an eighthembodiment of the present invention;

[0101]FIG. 32 is an elevational view of the contact electrode formed onthe contactor according to the eighth embodiment of the presentinvention;

[0102]FIG. 33 is a side view of the contact electrode shown in FIG. 32;

[0103]FIG. 34 is an elevational view of a variation of the contactelectrode shown in FIG. 32;

[0104]FIG. 35 is an elevational view of a variation of the contactelectrode shown in FIG. 32;

[0105]FIG. 36 is an illustration of an example of an LSI-circuit-sidecontact piece bent, not at a right angle, but at a predetermined anglesmaller than 90 degrees from an extending portion;

[0106]FIG. 37 is a plan view of a contact electrode formed on acontactor according to a ninth embodiment of the present invention;

[0107]FIG. 38 is a side view of the contact electrode shown in FIG. 37;

[0108]FIG. 39 is an illustration for explaining a contactor according toa tenth embodiment of the present invention;

[0109]FIG. 40 is an illustration of an arrangement of a contactelectrode formed on a contactor according to an eleventh embodiment ofthe present invention;

[0110]FIG. 41 is an illustration for explaining effects of thearrangement of the contact electrode shown in FIG. 40; and

[0111]FIG. 42 is a cross-sectional view of a part of a contactoraccording to a twelfth embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0112] A description will now be given, with reference to the drawings,of first to twelfth embodiments according to the present invention.

[0113]FIG. 3 is a cross-sectional view of a part of a contactoraccording to the first embodiment of the present invention. FIG. 4 is aplan view of a contact electrode shown in FIG. 3. A contactor 20according to the first embodiment of the present invention is formed asa substrate, in the form of a board or sheet, comprising a plurality ofcontact electrodes 22 shown in FIG. 3 and FIG. 4.

[0114] As shown in FIG. 3, in testing an LSI circuit 6, the contactor 20is placed between and electrically connects the LSI circuit 6 and a testboard 8. The LSI circuit 6 has a plurality of terminals 6 a formed asflat aluminum pads. The test board 8 has a plurality of electrodes 8 adisposed at positions corresponding to the terminals 6 a of the LSIcircuit 6. The electrodes 8 a are formed as flat pads each provided witha gold layer on its surface.

[0115] Each of the contact electrodes 22 is placed between acorresponding terminal 6 a of the LSI circuit 6 and a correspondingelectrode 8 a of the test board 8. The contact electrode 22 is arrangedto contact and electrically connect the terminal 6 a and the electrode 8a. In the present embodiment, the contact electrode 22 is formed of acopper plate or a copper foil (Cu) on an insulating substrate 24.

[0116] The contact electrode 22, as shown in FIG. 4, has an annularportion 22 a, an LSI-circuit-side contact piece 22 b 1 and atest-board-side contact piece 22 b 2. The insulating substrate 24 has acircular opening 24 a having a diameter substantially equal to an insidediameter of the annular portion 22 a.

[0117] The LSI-circuit-side contact piece 22 b 1 extends from an innercircumference of the annular portion 22 a toward a center of the annularportion 22 a, and is bent upwards at a predetermined angle near a partwhere the LSI-circuit-side contact piece 22 b 1 is connected to theannular portion 22 a. The test-board-side contact piece 22 b 2 extendsfrom the inner circumference of the annular portion 22 a toward thecenter of the annular portion 22 a, and is bent downwards at apredetermined angle near a part where the test-board-side contact piece22 b 2 is connected to the annular portion 22 a. That is, thetest-board-side contact piece 22 b 2 is bent toward an opposite side tothe LSI-circuit-side contact piece 22 b 1 through the opening 24 aformed in the insulating substrate 24.

[0118] The LSI-circuit-side contact piece 22 b 1 and the test-board-sidecontact piece 22 b 2 may be formed of a copper plate or a copper foiland used as they are. However, if a surface thereof is formed of copper,the surface may become oxidized and thus may cause a poor connection.Also, a simple copper plate or copper foil may not be able to provide anecessary contact pressure (approximately 10 grams per pin). Thus, it ispreferred that, as shown in FIG. 5, a conductive thin film layer 22 c 1be formed on a surface of the contact electrode 22 in order to preventthe surface from oxidization, to increase a strength of the contactelectrode 22 and improve an elasticity thereof.

[0119] The thin film layer 22 c 1 may be formed by plating. In thiscase, as a material forming the thin film layer 22 c 1, such a metalsubstance as nickel (Ni), cobalt (Co) and iron (Fe) is preferred, amongwhich nickel (Ni) is especially preferred. An alloy comprising nickel(Ni), cobalt (Co), iron (Fe) or copper (Cu) may form the thin film layer22 c 1. Also, gold (Au), silver (Ag), rhodium (Rh), palladium (Pd),platinum (Pt) and an alloy thereof may be used as the material. Further,tungsten (W), molybdenum (Mo) and an alloy thereof may also be used.Still further, an alloy of beryllium (Be) and copper (Cu) may form thethin film layer 22 c 1.

[0120] A description will now be given, with reference to FIG. 6, of aforming method of the contact electrode 22.

[0121]FIG. 6 is an illustration of steps of forming the contactelectrode 22. First, a copper plate or a copper foil is applied to theinsulating substrate 24 having the opening 24 a, and a prototype of thecontact electrode 22 as shown in FIG. 6-(A) is formed by such a methodas etching. The opening 24 a can be formed by laser machining, pressworking or etching. In addition, the opening 24 a may be formed byetching after applying a copper plate or a copper foil to the insulatingsubstrate 24. Additionally, in place of applying a copper plate or acopper foil, the prototype of the contact electrode 22 may be formed insuch a manner as plating with a copper layer or depositing a copperlayer.

[0122] Next, the prototype of the contact electrode 22 shown in FIG.6-(A) is plated so that the thin film layer 22 c 1 is formed thereon, asshown in FIG. 6-(B). A thickness of the thin film layer 22 c 1 may bedetermined by such considerations as a durability required for thecontactor 20, an operating temperature and materials forming theterminal 6 a of the LSI circuit 6.

[0123] After completion of the plating process, a bending process of thecontact pieces 22 b 1 and 22 b 2 is conducted, as shown in FIG. 6-(C).By using a bending template 26 comprising an upper template 26A and alower template 26B as shown in FIG. 7, both of the contact pieces 22 b 1and 22 b 2 can be bent in opposing directions at one time. Bendingangles of the contact pieces 22 b 1 and 22 b 2 may be determined so thattips of the contact pieces 22 b 1 and 22 b 2 are located atpredetermined positions (basically, substantially at the center) of thecorresponding terminal 6 a of the LSI circuit 6 and the correspondingelectrode 8 a of the test board 8, respectively, with considerationssuch as spring back taken into account.

[0124] In a case of manufacturing a testing contactor for a wafer-levelLSI circuit, it is preferred that the bending process be performed forall of contactor electrodes at one time. However, since only a veryshort period of time is required for a bending process, the bendingprocess may be performed group by group of several LSI circuits on awafer.

[0125] When the thin film layer 22 c 1 is formed on the contact pieces,it is sometimes hard to provide sharp bending angles. In this case, theplating process of the thin film layer 22 c 1 may be performed after thebending process. In the plating process, it may matter that the bendingangle and a shape of the contact pieces are altered. In this case, thebending process may be performed after plating of a certain thickness ofthe thin film layer 22 c 1, followed by a further plating process. Also,nickel (Ni) plating may be performed before the bending process in orderto increase a mechanical strength of the contact pieces, and after thebending process, plating of gold (Au) or palladium (Pd), which is notprone to oxidization, may be performed.

[0126] The contactor 20 manufactured as mentioned above requiressubstantially the same manufacturing process and manufacturing cost,even when a multitude of contact electrodes (contact pins) have to beformed as in a case of testing a wafer-level LSI circuit. Therefore, themore contact pins there are, the lower a unit price for a contact pinbecomes, and a low-cost contactor can be provided.

[0127] In addition, as shown in FIG. 8, another thin film layer 22 c 2may be formed as an uppermost layer on a surface of the thin film layer22 c 1. The thin film layer 22 c 2 is provided so as to reduce anelectrical resistance of the entire contact electrode and can be formedby plating. In a case of forming by plating, platinum metals such asgold (Au) and palladium (Pd) are preferred to be used.

[0128] Making a surface of an uppermost layer of the contact electroderough to a certain degree, that is, providing an irregularity on thesurface of the uppermost layer, facilitates an electrical contact. Thatis, when the LSI-circuit-side contact piece 22 b 1 and thetest-board-side contact piece 22 b 2 are pressed against thecorresponding terminal 6 a and the corresponding electrode 8 a,respectively, the irregularities on the surfaces of the uppermost layersbreak oxide films on the terminal 6 a and the electrode 8 a so as tofacilitate electrical contacts. A method of fluctuating an electriccurrent during plating can make the surface of the uppermost layerrough. For example, applying a voltage, fluctuating like a sine wave, asa plating voltage can alter plating conditions and, thus, provide anirregularity on a surface of a plating layer.

[0129] Additionally, when the contact electrode is placed in contactwith a solder terminal, it is preferred that the uppermost layer of thecontact electrode be formed of rhodium (Rh) to which a solder is notlikely to adhere and that the uppermost layer be formed of palladium(Pd) or platinum (Pt) which is not likely to compose a solder alloy.

[0130] For example, a contact electrode 22 having a structure shown inFIG. 8, comprising a copper foil of 18 μm in thickness applied on theinsulating substrate 24; a nickel (Ni) plating layer of 25 μm inthickness applied on a surface of the copper foil; and as an uppermostlayer, a gold (Au) or palladium (Pd) plating layer of 1 to 3 μm inthickness, can be used for more than 10,000 contacts, in a hightemperature of 125° C., with a contact pressure of 10 grams per pin. Theabove-mentioned contact electrode 22 can also be formed by forming anickel (Ni) plating layer of approximately 12 μm in thickness before thebending process; forming another nickel (Ni) plating layer ofapproximately 12 μm in thickness after the bending process; and forminga gold (Au) or palladium (Pd) plating layer of 1 to 3 μm in thickness.

[0131] As explained above, predetermined mechanical and electricproperties can be achieved by varying a number of plating layers,plating materials, a number of plating processes and a timing of platingprocesses.

[0132] In addition, after forming the abovementioned contact electrode22, a reinforcing material 28 may be provided at the root of each of theLSI-circuit-side contact piece 22 b 1 and the test-board-side contactpiece 22 b 2, as shown in FIG. 9A and FIG. 9B. The reinforcing material28 can be easily formed, for example, by applying an epoxy resin bypotting and curing the epoxy resin. Forming the reinforcing material 28at the root of each of the contact pieces prevents the contact piecefrom being damaged and provides a longer life duration for thecontactor.

[0133] In the above-mentioned contact electrode 22, the LSI-circuit-sidecontact piece 22 b 1 and the test-board-side contact piece 22 b 2 extendin the same diametrical line. However, the contact pieces 22 b 1 and 22b 2 may be staggered as shown in FIG. 10. In this case, the contactpieces 22 b 1 and 22 b 2 can be made longer so that the contact pieces22 b 1 and 22 b 2 have wider ranges of elastic deformation.

[0134] Likewise, lengths of the contact pieces 22 b 1 and 22 b 2 do nothave to be the same. As shown in FIG. 11, the contact piece 22 b 2 maybe longer than the contact piece 22 b 1. This is because the contactpiece 22 b 2, as shown in FIG. 3, has to extend through the opening 24 aof the insulating substrate 24 to the opposite side.

[0135] As mentioned above, lengths of the contact pieces can be arrangedso as to realize a structure that provides necessary contacts. It shouldbe noted that the contact electrode 22 can be formed on the insulatingsubstrate 24 on the side of the test board 8, as shown in FIG. 12.

[0136] Additionally, selecting a material of the insulating substrate 24so that coefficients of thermal expansion of the insulating substrate 24and the LSI circuit 6 are substantially equal prevents the contact piece22 b 1 from being detached from the terminal 6 a of the LSI circuit 6 asa result of a temperature change. Also, selecting a material of theinsulating substrate 24 so that coefficients of thermal expansion of theinsulating substrate 24 and the test board 8 are substantially equalprevents the contact piece 22 b 2 from being detached from the electrode8 a of the test board 8 as a result of a temperature change. Theinsulating substrate 24 may be formed of an insulating tape substratesuch as polyimide, a ceramics substrate, a glass substrate, or a silicon(Si) substrate having an insulating oxide film formed on a surfacethereof. A ceramics substrate, a glass substrate, and silicon (Si)substrate are less flexible than an insulating tape substrate such aspolyimide, but have an excellent flatness. Accordingly, elasticdeformations of the LSI-circuit-side contact piece 22 b 1 and thetest-board-side contact piece 22 b 2 can provide sure contacts with theLSI circuit 6 and the test board 8, respectively, by responding tovarying heights thereto.

[0137] Next, a description will be given, with reference to FIG. 13, ofthe second embodiment according to the present invention.

[0138]FIG. 13 is a cross-sectional view of a contact electrode 32 of acontactor according to the second embodiment of the present invention.An entire structure of the contactor is the same as the above-mentionedcontactor 20 according to the first embodiment, so a description thereofwill be omitted.

[0139] The contact electrode 32 shown in FIG. 13 is formed after acopper plate or a copper foil is applied on both surfaces of theinsulating substrate 24. The contact electrode 32, as the contactelectrode 22, has an annular portion 32 a and an LSI-circuit-sidecontact piece 32 b 1. The annular portion 32 a and the LSI-circuit-sidecontact piece 32 b 1 are formed of a copper plate or a copper foilapplied on one side (the LSI circuit 6's side) of the insulatingsubstrate 24. Accordingly, the annular portion 32 a and theLSI-circuit-side contact piece 32 b 1 are formed on the one side (theLSI circuit 6's side) of the insulating substrate 24.

[0140] However, unlike the above-mentioned contact electrode 22, atest-board-side contact piece 32 b 2 is formed of a copper plate or acopper foil applied on a side of the test board 8. Therefore, thetest-board-side contact piece 32 b 2 extends to the side of the testboard 8 without going through the opening 24 a.

[0141] The test-board-side contact piece 32 b 2 is electricallyconnected via a via hole 34 to the annular portion 32 a located on theopposite side of the insulating substrate 24. Accordingly, thetest-board-side contact piece 32 b 2 is electrically connected via thevia hole 34 and the annular portion 32 a to the LSI-circuit-side contactpiece 32 b 1.

[0142] According to the contactor having the contact electrode 32 of thepresent embodiment, contact pieces having the same structure can beformed both on the side to the LSI circuit and on the side to the testboard, by forming contact pieces 32 b 1 and 32 b 2 of the same lengthand bending the contact pieces 32 b 1 and 32 b 2 at the same angle.

[0143] Next, a description will be given, with reference to FIG. 14 toFIG. 17, of the third embodiment according to the present invention.FIG. 14 is a plan view of a contact electrode 42 of a contactoraccording to the third embodiment of the present invention. FIG. 15 is across-sectional view of the contact electrode 42 shown in FIG. 14.

[0144] The contact electrode 42, shown in FIG. 14, according to thethird embodiment of the present invention is a contact electrode adaptedto a case where a terminal of the LSI circuit 6 is a protrudingelectrode 6 b such as a solder bump (shown in FIG. 16). In order toprevent an LSI-circuit-side contact piece 42 b 1 from undergoing apermanent deformation due to a contact pressure with the solder bump 6b, the two LSI-circuit-side contact pieces 42 b 1 are juxtaposed on bothsides of a centerline of the solder bump 6 b, avoiding the center of thesolder bump 6 b. In FIG. 15, the LSI-circuit-side contact piece 42 b 1is level, not bent toward the LSI circuit 6.

[0145]FIG. 16 is a cross-sectional view of the contact electrode 42placed between the LSI circuit 6 and the test board 8. TheLSI-circuit-side contact pieces 42 b 1, pressed by the solder bump 6 b,are elastically deformed toward the test board 8, bent into the opening24 a. This elastic deformation provides a sure contact between theLSI-circuit-side contact pieces 42 b 1 and the solder bump 6 b.

[0146] It should be noted that the LSI-circuit-side contact piece 42 b 1does not necessarily have to be level, but may be bent a little towardthe test board 8 beforehand so that the LSI-circuit-side contact pieces42 b 1 deforms within a range of its elastic deformation. Also, as shownin FIG. 17, forming the LSI-circuit-side contact piece 42 b 1 curvedalong a shape of the solder bump 6 b beforehand provides a surer contactbetween the LSI-circuit-side contact pieces 42 b 1 and the solder bump 6b.

[0147] Next, a description will be given, with reference to FIG. 18 toFIG. 21, of the fourth embodiment according to the present invention.FIG. 18 is a plan view of a contact electrode 52 of a contactoraccording to the fourth embodiment of the present invention.

[0148] As the contact electrode 22 according to the first embodiment ofthe present invention, the contact electrode 52 shown in FIG. 18 has anannular portion 52 a, an LSI-circuit-side contact piece 52 b 1 and atest-board-side contact piece 52 b 2. However, the contact electrode 52according to the present embodiment is formed as follows: forming anopening 24 b having a shape corresponding to a shape of the contactelectrode 52 in the insulating substrate 24 in advance; and forming aconductive film around a periphery of the opening 24 b by such a methodas plating or sputtering. That is, the contact electrode 52 itself isformed by such a method as plating or sputtering.

[0149]FIG. 19 is an illustration of steps of forming the contactelectrode 52. First, as shown in FIG. 19-(A), the opening 24 b havingthe shape corresponding to the shape of the contact electrode 52 isformed in the insulating substrate 24. Since the insulating substrate 24is formed of such a resin sheet as a polyimide resin sheet, the opening24 b is easily formed by such a method as press working or etching. FIG.20 is a plan view of the opening 24 b formed in the insulating substrate24.

[0150] Thereafter, a conductive film 54 is formed on all surfaces of theinsulating substrate 24, as shown in FIG. 19-(B). The conductive film 54is formed by sputtering such metals as chromium (Cr) or by electrolessnickel (Ni) plating. Next, as shown in FIG. 19-(C), a part of theconductive film 54 is removed by such a method as etching so that a partto become the contact electrode 52 is left on the insulating substrate24. Thereafter, as the contact electrode 22 according to the firstembodiment, the LSI-circuit-side contact piece 52 b 1 and thetest-board-side contact piece 52 b 2 are bent by using a bendingtemplate. This completes the contact electrode 52.

[0151]FIG. 21 is another illustration of steps of forming the contactelectrode 52. First, in the steps shown in FIG. 21, as in the stepsshown in FIG. 19, the opening 24 b having the shape corresponding to theshape of the contact electrode 52 is formed in the insulating substrate24, as shown in FIG. 21-(A). Next, as shown in FIG. 21-(B), a mask 56 isplaced on the insulating substrate 24 so as to expose a shape of thecontact electrode 52.

[0152] Then, the conductive film 54 is formed on the insulatingsubstrate 24. Thereafter, as shown in FIG. 21-(C), the mask 56 alongwith a part of the conductive film 54 formed thereon is removed.Thereafter, as shown in FIG. 21-(D), the LSI-circuit-side contact piece52 b 1 and the test-board-side contact piece 52 b 2 are bent by using abending template.

[0153] In the contact electrode 52 of the contactor according to thepresent embodiment, the LSI-circuit-side contact piece 52 b 1 and thetest-board-side contact piece 52 b 2 can have the same length.

[0154] Next, a description will be given, with reference to FIG. 22 toFIG. 24, of the fifth embodiment according to the present invention.

[0155] The contactor according to the present embodiment comprises acontact electrode provided with a plating layer on its surface byelectrolytic plating. FIG. 22 to FIG. 24 show the contact electrode 22shown in FIG. 5 as an example of a contact electrode.

[0156] In the present embodiment, in forming a conductive film patternfor the contact electrode 22 not plated yet, an electric supply pattern60 to be used in the plating process is formed in advance. That is, in astate of the contact electrode 22 not yet plated with the thin filmlayer 22 c 1 (the state shown in FIG. 6-(A)), the electric supplypattern 60 for a later use in the plating process is formed, as shown inFIG. 22 to FIG. 24. The electric supply pattern 60 is connected to eachof the contact electrodes 22 and is used for supplying a plating currentto the contact electrode 22 in forming the thin film layer 22 c 1 byelectrolytic plating. The electric supply pattern 60 can be formed atthe same time as when the prototype of the contact electrode 22 isformed, by using a copper plate or a copper foil applied to theinsulating substrate 24.

[0157] After being used to supply a plating current in the platingprocess, the electric supply pattern 60 is severed at predeterminedparts by such a method as laser cutting or punching. As shown in FIG.23, by forming an opening 62 near the contact electrode 22 and arrangingthe electric supply pattern 60 to cross this opening 62, the electricsupply pattern 60 can be easily severed by punching, using this opening62. Also, as shown in FIG. 24, by bringing together a plurality of theelectric supply patterns 60 at one part and forming an opening 64 atthis part, a plurality of the electric supply patterns 60 can be easilysevered by punching.

[0158] As mentioned above, according to a manufacturing method of thecontactor of the present embodiment, a plating layer can be easilyformed on a surface of the contact electrode and a manufacturing cost ofthe contactor can be reduced.

[0159] Next, a description will be given, with reference to FIG. 25 toFIG. 27, of the sixth embodiment according to the present invention.

[0160] The contactor according to the present embodiment, as theabove-mentioned fifth embodiment, has an electric supply pattern 70 forthe plating process. However, the electric supply pattern 70 is formedon a side opposite to the side where the contact electrode 22 is formed,as shown in FIG. 25.

[0161] That is, in the present embodiment, after a copper plate or acopper foil is applied on both surfaces of the insulating substrate 24,the contact electrode 22 is formed from the copper plate or the copperfoil applied on one surface thereof, and, on the other hand, theelectric supply pattern 70 is formed from the copper plate or the copperfoil applied on the opposite surface. The contact electrode 22 and theelectric supply pattern 70 are electrically connected by a via hole 72.The contact electrode 22 has a protruding piece 74 in which to form thevia hole 72, as shown in FIG. 26.

[0162] In the present embodiment, after completion of the platingprocess, the entire electric supply pattern 70 can be removed byetching, or, as shown in FIG. 27, can be removed at one time by apeeling method. Therefore, a used electric supply pattern 70 can beremoved with ease.

[0163] Next, a description will be given, with reference to FIG. 28 toFIG. 30, of the seventh embodiment according to the present invention.

[0164]FIG. 28 is a plan view of a contact electrode 82 formed on acontactor according to the seventh embodiment of the present invention.FIG. 29 is a side view of the contact electrode 82 shown in FIG. 28.

[0165] As shown in FIG. 28, the contact electrode 82 according to thepresent embodiment comprises an extending portion 82 a, anLSI-circuit-side contact piece 82 b 1 and a test-board-side contactpiece 82 b 2. In the above-mentioned contact electrode 22 according tothe first embodiment, the LSI-circuit-side contact piece 22 b 1 and thetest-board-side contact piece 22 b 2 are connected via the annularportion 22 a. In the present embodiment, however, the LSI-circuit-sidecontact piece 82 b 1 and the test-board-side contact piece 82 b 2 areconnected via the extending portion 82 a. Although FIG. 28 shows theextending portion 82 a in a straight line, the extending portion 82 amay have an optional shape such as a bent shape or a curved shape.

[0166] On one end of the extending portion 82 a is formed theLSI-circuit-side contact piece 82 b 1. Accordingly, the insulatingsubstrate 24 has an opening 24 c 1 formed at a position corresponding tothe one end of the extending portion 82 a. By using this opening 24 c 1,the LSI-circuit-side contact piece 82 b 1 can be easily bent toward theLSI circuit 6.

[0167] On the other end of the extending portion 82 a is formed thetest-board-side contact piece 82 b 2. Accordingly, the insulatingsubstrate 24 has an opening 24 c 2 formed at a position corresponding tothe other end of the extending portion 82 a. Through this opening 24 c2, the test-board-side contact piece 82 b 2 can be bent toward the testboard 8.

[0168]FIG. 30 is a plan view of an example of a shape of the extendingportion 82 a. In FIG. 30, the extending portion 82 a extends to theelectrode 8 a of the test board 8 (shown in FIG. 29) away from theLSI-circuit-side contact piece 82 b 1 so as to substantially extend apitch P1 between the terminals 6 a. That is, in a case of the pitch P1being narrow, a pitch P2 between the electrodes 8 a of the test board 8can be extended. In addition, by extending the extending portion 82 a ina predetermined direction, the electrode 8 a of the test board 8 can bearranged at any location.

[0169] For example, in a case where the LSI circuit 6 has two rows ofthe terminals 6 a arranged around at the periphery thereof, drawing theextending portions 82 a around allows the electrodes 8 a of the testboard 8 to be arrayed like a matrix on an area corresponding to theentire LSI circuit 6. As described above, the contactor according to thepresent embodiment can provide a large degree of freedom in arrangingthe electrodes 8 a of the test board 8.

[0170] Next, a description will be given, with reference to FIG. 31 toFIG. 36, of the eighth embodiment according to the present invention.

[0171]FIG. 31 is a plan view of a contact electrode 92 before beingbent, the contact electrode 92 being formed on a contactor according tothe eighth embodiment of the present invention. FIG. 32 is anelevational view of the contact electrode 92. FIG. 33 is a side view ofthe contact electrode 92.

[0172] As with the above-mentioned contact electrode 82 according to theseventh embodiment, the contact electrode 92 according to the presentembodiment comprises an extending portion 92 a and a test-board-sidecontact piece 92 b 2 connected with one end of the extending portion 92a. However, an LSI-circuit-side contact piece 92 b 1 of the contactelectrode 92 is formed into a bent or curved plane as seen in the planview (FIG. 31). When used, the LSI-circuit-side contact piece 92 b 1 isbent at a right angle to the extending portion 92 a as seen in theelevational view (FIG. 32).

[0173] The LSI-circuit-side contact piece 92 b 1 shown in FIG. 31 toFIG. 33 has a substantially U-shaped portion. Therefore, takingadvantage of an elastic deformation of this portion, as shown by adouble dashed chain line in FIG. 33, a contact electrode having a largeelastic deformation can be easily formed.

[0174]FIG. 34 and FIG. 35 are elevational views of variations of thecontact electrode 92 shown in FIG. 31 to FIG. 33. A contact electrode92A shown in FIG. 34 comprises an LSI-circuit-side contact piece 92Ab 1having a substantially horizontal-S-shaped portion, which portionachieves a wide range of elastic deformation. The LSI-circuit-sidecontact piece 92Ab 1 stands, being bent from a position vertical to adirection in which the extending portion 92 a extends. A contactelectrode 92B shown in FIG. 35 comprises an LSI-circuit-side contactpiece 92Bb 1 having a substantially vertical-S-shaped portion replacingthe LSI-circuit-side contact piece 92Ab 1 having a substantiallyhorizontal-S-shaped portion in the contact electrode 92A shown in FIG.34.

[0175] Forming the contact piece in a S-shape, as mentioned above, canmake a displacement of a tip of the contact piece in a horizontaldirection smaller than a displacement in a vertical direction, duringelastic deformation. This prevents the tip of the contact piece fromdamaging the terminal of the LSI circuit when the contact piece is putinto contact with the terminal of the LSI circuit.

[0176]FIG. 36 shows an example of the LSI-circuit-side contact piece 92b 1 bent, not at a right angle, but at a predetermined angle a smallerthan 90 degrees to the extending portion 92 a. This structure achievesan elastic deformation due to the curve of the contact piece and anelastic deformation due to the incline of the contact piece at the sametime.

[0177] As mentioned above, because of a wide range of the elasticdeformation of the contact piece, the contact electrode of the contactoraccording to the present embodiment can reduce a stress during elasticdeformation of the contact piece. Therefore, a contact piece whichendures repeated deformation a multiple number of times can be easilyformed.

[0178] Also because of the wide range of the elastic deformation of thecontact piece, when the terminals of the LSI circuit have variousheights, the deformation of the contact piece can deal with such variousheights. For example, in testing a wafer-level LSI circuit, the heightsof the terminals of the LSI circuit vary by approximately 100 μm. Thecontact piece according to the present embodiment can easily adjust tothe various heights.

[0179] In the present embodiment, the LSI-circuit-side contact piece isformed substantially U-shaped or substantially S-shaped. However, theLSI-circuit-side contact piece is not limited to these shapes, but othervariations of curved shapes can be employed. Also, in the presentembodiment, the LSI-circuit-side contact piece is formed into a curvedshape. However, the test-board-side contact piece can also be formedinto a curved shape. Further, in the present embodiment, as in the firstembodiment, the thin film layer may be formed on the surface of thecontact electrode by such a method as plating so as to improvemechanical and electric properties of the contact piece.

[0180] Next, a description will be given, with reference to FIG. 37 andFIG. 38, of the ninth embodiment according to the present invention.FIG. 37 is a plan view of a contact electrode 102 formed on a contactoraccording to the ninth embodiment of the present invention. FIG. 38 is aside view of the contact electrode 102 shown in FIG. 37.

[0181] The contact electrode 102 has the same basic structure as thecontact electrode 82 shown in FIG. 28 and FIG. 29 according to theseventh embodiment. However, an LSI-circuit-side contact piece 102 b 1of the contact electrode 102 according to the present embodiment is benttogether with the insulating substrate 24, as shown in FIG. 38.Although, in FIG. 37 and FIG. 38, the LSI-circuit-side contact piece 102b 1 is bent together with the insulating substrate 24, a test-board-sidecontact piece 102 b 2 may be bent together with the insulating substrate24 instead.

[0182] According to the present embodiment, elastic deformation of thecontact piece of the contact electrode can be achieved by usingelasticity of the insulating substrate.

[0183] Next, a description will be given, with reference to FIG. 39, ofthe tenth embodiment according to the present invention.

[0184] A contactor according to the present embodiment comprises thecontact electrodes of the contactors according to the above-mentionedembodiments and a wiring pattern 110 formed on the insulating substrate24. The wiring pattern 110 connects predetermined contact electrodesamong the above-mentioned contact electrodes.

[0185] The wiring pattern 110 shown in FIG. 39 connects contactelectrodes, each of the contact electrodes to be contacted with aparticular terminal on each of wafer-level LSI circuits. Accordingly, byconnecting the end of the wiring pattern 110 to an electric powersource, a voltage can be applied via the contactor to the particularterminals on the wafer-level LSI circuits. Also, the particularterminals on the wafer-level LSI circuits can be grounded at one timevia the contactor. Further, electrical conditions of the particularterminals on the wafer-level LSI circuits can be detected at one timevia the contactor.

[0186] Next, a description will be given, with reference to FIG. 40 andFIG. 41, of the eleventh embodiment according to the present invention.

[0187]FIG. 40 is an illustration of an arrangement of a contactelectrode formed on a contactor according to the eleventh embodiment ofthe present invention. FIG. 41 is an illustration for explaining effectsof the arrangement of the contact electrode formed on the contactoraccording to the eleventh embodiment of the present invention.

[0188] The contactor according to the present embodiment uses thecontact electrodes of the contactors according to the above-mentionedembodiments. However, each of the contact electrodes is arranged in adirection according to a predetermined rule. FIG. 40 and FIG. 41 show asan example the above-mentioned contact electrode 22 according to thefirst embodiment.

[0189] Specifically, as shown in FIG. 40, each of the contact electrodes22 is arranged in a direction so that the contact pieces 22 b 1 and 22 b2 are aligned radially from a center 0 of the contactor to the peripherythereof. This arrangement of the contact electrode deals with shiftingof the terminal of the LSI circuit and the electrode of the test boardcaused by different coefficients of thermal expansion of the LSI circuit(wafer), the insulating substrate of the contactor and the test board.

[0190] That is, the different coefficients of thermal expansion of theLSI circuit (wafer), the insulating substrate of the contactor and thetest board sometimes cause the terminal of the LSI circuit or theelectrode of the test board to shift with respect to the correspondingcontact piece of the contact electrode. Since the contact piece ispressed against the terminal or the electrode at a predeterminedpressure, if the terminal or the electrode shifts in such a direction asto increase a bending angle of the contact piece, the tip of the contactpiece may bite into the terminal or the electrode, so the contact pieceand the terminal or the electrode may be deformed or damaged.

[0191] In the present embodiment, as shown in FIG. 41, each of thecontact electrodes 22 is arranged so that, if the terminal of the LSIcircuit or the electrode of the test board shifts with respect to thecorresponding contact piece, the terminal or the electrode shifts insuch a direction as to decrease the bending angle of the contact piece.This allows the tip of the contact piece to shift smoothly on theterminal or the electrode and prevents the contact piece from bitinginto the terminal or the electrode.

[0192] Also, according to the above-mentioned arrangement of the contactelectrode, when the temperature rises, the contact piece of the contactelectrode extends by thermal expansion in the same direction as theterminal of the LSI circuit or the electrode of the test board shifts bythermal expansion. This allows the tip of the contact piece to shift inthe same direction as the terminal or the electrode shifts by thermalexpansion, and thus prevents the tip of the contact piece from beingdetached from the terminal or the electrode.

[0193] Next, a description will be given, with reference to FIG. 42, ofthe twelfth embodiment according to the present invention.

[0194]FIG. 42 is a cross-sectional view of a part of a contactor 120according to the twelfth embodiment of the present invention. Thecontactor according to the present embodiment uses the contactelectrodes according to the above-mentioned embodiments. FIG. 42 showsas an example the contact electrode 22 according to the firstembodiment.

[0195] The contactor 120 according to the present embodiment comprises aspacer 122 on the side of the test board 8. The spacer 122 has apredetermined thickness so that, when the contactor 120 is pressedtoward the test board 8, the distance between the contactor 120 and thetest board 8 is maintained (at the thickness of the spacer 122). Thisprevents the contact piece of the contact electrode 22 from beingexcessively pressed and suffering a permanent deformation or damages,when an excessive pressure is imposed on the contactor 120.

[0196] The present invention is not limited to the specificallydisclosed embodiments, and variations and modifications may be madewithout departing from the scope of the present invention.

[0197] The present application is based on Japanese priority applicationNo.2000-080974 filed on Mar. 22, 2000, the entire contents of which arehereby incorporated by reference.

What is claimed is:
 1. A contactor which is placed between asemiconductor device and a test board so as to electrically connect saidsemiconductor device to said test board, said contactor comprising: aninsulating substrate; and a contact electrode formed of a conductivelayer provided on said insulating layer, the contact electrodecomprising a first contact piece which contacts a terminal of saidsemiconductor device, a second contact piece which contacts an electrodeof said test board, and a connecting portion which electrically connectssaid first contact piece and said second contact piece.
 2. The contactoras claimed in claim 1 , further comprising an opening in said insulatingsubstrate at a position where said contact electrode is formed, one ofsaid first contact piece and said second contact piece extending fromone surface of said insulating substrate to the other surface thereofthrough said opening.
 3. The contactor as claimed in claim 1 , whereinsaid first contact piece and said second contact piece are placed awayfrom each other, and said connecting portion electrically connects saidfirst contact piece and said second contact piece as an interconnectionpattern having a predetermined shape.
 4. The contactor as claimed inclaim 1 , wherein each of said first contact piece and said secondcontact piece is placed so that a longitudinal direction thereof isaligned with a radial direction from a center of said insulatingsubstrate.
 5. A method of manufacturing a contactor which contactor isplaced between a semiconductor device and a test board so as toelectrically connect said semiconductor device to said test board, saidmethod comprising the steps of: forming a conductive layer on aninsulating substrate; processing said conductive layer into a contactelectrode comprising a first contact piece which contacts a terminal ofsaid semiconductor device, a second contact piece which contacts anelectrode of said test board, and a connecting portion whichelectrically connects said first contact piece and said second contactpiece; and bending said first contact piece toward a first surface ofsaid insulating substrate at a predetermined angle and bending saidsecond contact piece toward a second surface opposite to said firstsurface of said insulating substrate at a predetermined angle.
 6. Themethod as claimed in claim 5 , wherein the step of forming a conductivelayer includes the step of applying a film material composed of aconductive material on a surface of said insulating substrate; and thestep of processing includes the step of removing parts of saidconductive layer applied on said insulating substrate so as to form saidfirst contact piece, said second contact piece and said connectingportion.
 7. The method as claimed in claim 5 , wherein the step offorming a conductive layer includes the step of depositing a conductivematerial on a surface of said insulating substrate so as to form saidconductive layer; and the step of processing includes the step ofremoving parts of said conductive layer deposited on said insulatingsubstrate so as to form said first contact piece, said second contactpiece and said connecting portion.
 8. The method as claimed in claim 5 ,further comprising the step of forming an opening in said insulatingsubstrate at a position where said first contact piece and said secondcontact piece are formed.
 9. A method of manufacturing a contactor whichcontactor is placed between a semiconductor device and a test board soas to electrically connect said semiconductor device to said test board,said method comprising the steps of: processing parts of an insulatingsubstrate into a first contact piece which contacts a terminal of saidsemiconductor device and a second contact piece which contacts anelectrode of said test board; forming a conductive layer on said firstcontact piece and said second contact piece and forming a part of saidconductive layer into a connecting portion which electrically connectssaid first contact piece and said second contact piece; and bending saidfirst contact piece toward a first surface of said insulating substrateat a predetermined angle and bending said second contact piece toward asecond surface opposite to said first surface of said insulatingsubstrate at a predetermined angle.
 10. The method as claimed in claim 9, wherein the step of processing includes the step of forming an openingin said insulating substrate so as to form said first contact piece andsaid second contact piece.
 11. The method as claimed in claim 5 ,wherein at least one of said first contact piece and said second contactpiece is one of a curved plane and a bent plane, and said method furthercomprising the step of bending said at least one of said first contactpiece and said second contact piece, at a position where said connectingportion and said at least one of said first contact piece and saidsecond contact piece meet, at a predetermined angle from said insulatingsubstrate.
 12. The method as claimed in claim 5 , further comprising thestep of forming at least one surface layer on a surface of saidconductive layer so as to change properties of said contact electrode.13. The method as claimed in claim 5 , further comprising the step offorming a reinforcing material at a position where said connectingportion and each of said first contact piece and said second contactpiece meet.